-New procedure to delaminate epitaxial graphene from a doped SiC substrate to another substrate by means of mechanical separation, or exfoliation of the graphene wafers.
-The separation is induced by an electrochemical method, specifically the hydrogen bubbling at the graphene-SiC interface produced during the water electrolysis into the graphene-SiC interface.
-An adjustment of the minimal mechanical stress allow to maintain the high crystalline quality of the initial epitaxial graphene.
-Single-step process: single steps-exfoliation without necessity of other additional mechanical traction.
-A polymeric layer with controlled thickness (commercial materials) is used as transfer material.
-The types of substrates that can be used to transfer the EG-SiC are many and known to any expert in the field.
Competitive advantages: cheaper, simpler, one-step exfoliation without previous hydrogenation or multilayer deposition, versatile method applicable to various SiC substrates, reusable SiC substrate after graphene exfoliation, easy scale-up, fast, and economically sustainable process.
To be determined during further development
Patient need addressed: nanoelectronics, biomedical devices